Low Noise Amplifiers (LNAs) play a vital role in communication systems, especially in the receiver section, as they amplify weak received signals with minimal noise. These amplifiers come in various types, but the common-source structure with inductive degeneration is considered one of the most widely used topologies in this field due to its optimal balance between noise figure, gain, and input impedance matching. In this article, the design and simulation of an LNA for the 1.8 GHz GSM band with the aim of achieving high gain, a noise figure of less than 2 dB, and low power consumption are presented. The designed structure utilizes inductive peaking techniques, cascoded configuration to improve stability and isolation, and impedance matching networks. The simulations were conducted using the Cadence Virtuoso tool with the SpectreRF simulator, based on TSMC 0.18 μm RF CMOS technology, with S-parameter and linear and nonlinear analyses. The results show that the designed amplifier has a gain of 17.88 dB, a noise figure of 1.87 dB, and a power consumption of 4.3 mW, making it suitable for sensitive RF applications, especially in mobile devices and base stations.